Trapped-Ion Quantum Logic with Global Radiation Fields.

نویسندگان

  • S Weidt
  • J Randall
  • S C Webster
  • K Lake
  • A E Webb
  • I Cohen
  • T Navickas
  • B Lekitsch
  • A Retzker
  • W K Hensinger
چکیده

Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.

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عنوان ژورنال:
  • Physical review letters

دوره 117 22  شماره 

صفحات  -

تاریخ انتشار 2016